자료유형  

 학위논문

Control Number  

0017164893

International Standard Book Number  

9798346380771

Dewey Decimal Classification Number  

620

Main Entry-Personal Name  

Noshin, Maliha.

Publication, Distribution, etc. (Imprint  

[S.l.] : Stanford University., 2024

Publication, Distribution, etc. (Imprint  

Ann Arbor : ProQuest Dissertations & Theses, 2024

Physical Description  

112 p.

General Note  

Source: Dissertations Abstracts International, Volume: 86-05, Section: A.

General Note  

Advisor: Chowdhury, Srabanti.

Dissertation Note  

Thesis (Ph.D.)--Stanford University, 2024.

Summary, Etc.  

요약The increasing energy-consumption due to increased electrification of our society is pushing the limit of today's power-electronics systems. To address this challenge, the development of higher energy-density power-electronic devices and systems will be a key enabler of energy technologies for future grid-electronics and data centers. To this end, ultrawide-bandgap (UWBG) semiconducting materials-like aluminum gallium nitride (AlGaN) are emerging as promising candidates for high-power electronics, beyond the limitations of conventional materials like silicon.In this thesis, I will present the first demonstration of nitrogen (N)-polar AlGaN (Al = 20% to 73%) heterostructure based high-electron mobility transistors. First, I will discuss the compositional design space and metal organic chemical vapor deposition (MOCVD)-growth of such heterostructures to realize a tunable and large bandgap, followed by the materials characterization. I will simultaneously explain how the alloy-dominated scattering of charge carriers in such material system can control its two-dimensional electron gas mobility. Leveraging these fundamental understanding, I will demonstrate the realization of the first N-polar AlGaN-channel high electron mobility transistors, achieving simultaneously large drive current, low contact resistance, low leakage current and large breakdown voltage. Finally, I will illustrate the interface-driven thermal and electrical transport and their temperature dependence in such heterostructures, offering important insights into material-device codesign, electronic device functionality and reliability. This work demonstrates the outstanding potential of AlGaN-based heterostructures for high-power density electronic devices and systems.

Subject Added Entry-Topical Term  

Silicon.

Subject Added Entry-Topical Term  

Electrons.

Subject Added Entry-Topical Term  

Optimization techniques.

Subject Added Entry-Topical Term  

Electric fields.

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Electric vehicles.

Subject Added Entry-Topical Term  

Signal processing.

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Microscopy.

Subject Added Entry-Topical Term  

Etching.

Subject Added Entry-Topical Term  

Aluminum.

Subject Added Entry-Topical Term  

Transistors.

Subject Added Entry-Topical Term  

Heat conductivity.

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Nitrogen.

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Atomic physics.

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Electrical engineering.

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Electromagnetics.

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Thermodynamics.

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Transportation.

Added Entry-Corporate Name  

Stanford University.

Host Item Entry  

Dissertations Abstracts International. 86-05A.

Electronic Location and Access  

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Control Number  

joongbu:655947