자료유형  

 학위논문

Control Number  

0016932790

International Standard Book Number  

9798379845148

Dewey Decimal Classification Number  

620

Main Entry-Personal Name  

Dzuba, Brandon.

Publication, Distribution, etc. (Imprint  

[S.l.] : Purdue University., 2022

Publication, Distribution, etc. (Imprint  

Ann Arbor : ProQuest Dissertations & Theses, 2022

Physical Description  

1 online resource(132 p.)

General Note  

Source: Dissertations Abstracts International, Volume: 85-01, Section: B.

General Note  

Advisor: Manfra, Michael.

Dissertation Note  

Thesis (Ph.D.)--Purdue University, 2022.

Restrictions on Access Note  

This item must not be sold to any third party vendors.

Summary, Etc.  

요약Research that seeks to understand and develop the growth of III-nitride materials by molecular beam epitaxy (MBE) is beneficial to a broad range of the device community. MBE and the III-nitrides have been used to develop transistors, diodes, electroacoustic devices, solar cells, LEDs, LDs, intersubband devices, and quantum-cascade lasers. In this work we focus on the growth of III-nitride materials specifically for applications in near-infrared intersubband (NIR ISB) optical devices, however all this work is broadly applicable.We begin by investigating the reduced indium incorporation in non-polar m-plane InGaN films. We find that InGaN grown on m-plane GaN has an effective activation energy for thermal decomposition of 1 eV, nearly half that reported for similar c-plane films. We produce high quality m-plane In0.16Ga0.84N and utilize it in AlGaN/InGaN devices designed for near-infrared ISB absorption measurements. We continue this work by exploring the growth of low-temperature AlGaN, necessary for these devices. We find that the utilization of an indium surfactant during low-temperature AlGaN growth enhances adatom diffusion, resulting in smoother surface morphologies, sharper interfaces, and reduced defects within the material. This growth method also prevents the anomalous suppression of the AlGaN growth rate, which we link to a reduction in the formation of high-aluminum containing defects. These investigations result in the demonstration of an Al0.24Ga0.76N/In0.16Ga0.84N heterostructure with a conduction band offset large enough to enable NIR ISB transitions.Lastly, we explore the novel material ScAlN. This material's large bandgap, large spontaneous polarization, ferroelectricity, and ability to be lattice matched to GaN at ~18% scandium composition make it an ideal candidate for a variety of devices, including NIR ISB devices. We investigate the reported temperature dependence of ScAlN's c-lattice constant and confirm this dependence is present for high growth-temperature ScxAl1-xN with 0.11 x 0.23. We find that this temperature dependence is no longer present below a certain compositiondependent growth temperature. This finding, coupled with observations that samples grown at lower temperatures exhibit lower defect densities, smoother surfaces, and homogeneous chemical compositions suggest that high growth temperatures lead to defect generation that may cause the observed change in lattice parameters. We demonstrate lattice-matched, 50 repeat Sc0.18Al1- xN/GaN heterostructures with ISB absorption in excess of 500 meV with FWHM as little as 45 meV.

Subject Added Entry-Topical Term  

Silicon.

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Crystal structure.

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Surfactants.

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Plasma.

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Magnetic fields.

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Light emitting diodes.

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Binomial distribution.

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Decomposition.

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Aluminum.

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Design.

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Applied physics.

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Molecular beam epitaxy.

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Energy.

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Indium.

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Quantum dots.

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Nitrogen.

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Electrical engineering.

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Electromagnetics.

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Optics.

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Physics.

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Quantum physics.

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Statistics.

Added Entry-Corporate Name  

Purdue University.

Host Item Entry  

Dissertations Abstracts International. 85-01B.

Host Item Entry  

Dissertation Abstract International

Electronic Location and Access  

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Control Number  

joongbu:641396