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SS:DEVICE PP:경희대학교 재료과학기술연구소 AA:송영섭
0.108 sec.
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Schottky Barrier Gate Charge Coupled Device의 전위와 전계 분포에 관한 2차원 해석 선택
Schottky Barrier Gate Charge Coupled Device의 전위와 전계 분포에 관한 2차원 해석
송영섭
| 경희대학교 재료과학기술연구소 |
1997
impresión
Status Info
Status Info
Status Info
등록번호
별치/청구기호
소장처
대출여부
대출정보
AR0003714
A
-
041 경97재
기사색인
대출불가
처음
1
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