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1
Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN.
Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN.
Yang, Tsung-Han.Electrical Engineering. | Arizona State University. | 2021
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2
Ferrite (Fe2O3)5-(Al2O3)3.8-(Ga2o3)0.2-SiO의 온도변화에 의한 자기적 특성연구
Ferrite (Fe2O3)5-(Al2O3)3.8-(Ga2o3)0.2-SiO의 온도변화에 의한 자기적 특성연구
최승한 | 慶山大學校 | 1997
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