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Simulation of Measurement-Based Entanglement in Silicon Spin Qubits.
Simulation of Measurement-Based Entanglement in Silicon Spin Qubits.

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자료유형  
 학위논문
Control Number  
0017161662
International Standard Book Number  
9798382808031
Dewey Decimal Classification Number  
530.1
Main Entry-Personal Name  
Delva, Remy L.
Publication, Distribution, etc. (Imprint  
[S.l.] : Princeton University., 2024
Publication, Distribution, etc. (Imprint  
Ann Arbor : ProQuest Dissertations & Theses, 2024
Physical Description  
110 p.
General Note  
Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
General Note  
Advisor: Petta, Jason R.
Dissertation Note  
Thesis (Ph.D.)--Princeton University, 2024.
Summary, Etc.  
요약Electron spin qubits in silicon show promise for quantum computing applications due to their long spin-coherence times, small qubit sizes, and the applicability of existing nanofabrication infrastructure and techniques to their construction. One drawback is the relative difficulty of manipulating the electron's spin state.Measurement-based entanglement (MBE) is a method of generating entangled qubit pairs through the state projection that accompanies a parity or similar measurement. Instead of generating entangled states via direct qubit-qubit interactions, one can use a suitable measurement to project an initial unentangled two-qubit system into an entangled subspace. This entanglement mechanism does not require the creation of any direct qubit-qubit interactions that would need to be turned off before using entangled pairs in a quantum algorithm; only the cessation of measurement is required. Adaptations of these techniques may be an effective addition to the current set of entanglement-generation techniques for silicon spin qubits. This thesis is intended to assess the feasibility of implementing measurement-based entanglement with silicon spin qubits.We will first review the design and operation of electron-spin double-quantum-dot (DQD) qubits in Si/SiGe, outline theoretical models for continuous quantum measurements and open quantum systems, and discuss how parity measurements can be used to establish entanglement between initially unentangled qubits.We will then discuss how such a parity measurement protocol could be implemented in a two-qubit circuit-quantum-electrodynamics experiment. After deriving a stochastic master equation describing the evolution of two flopping-mode DQDs coupled to a resonant cavity, we present and interpret numerical simulation results demonstrating the influence of qubit and cavity parameters on the corresponding final state fidelity.Using simulation results corresponding to current silicon spin-qubit devices, we determine which device parameters must be altered or improved in order to make measurement-based entanglement of silicon spin qubits experimentally viable. Specifically, with cavity loss and qubit decoherence rates \uD835\uDF05 and \uD835\uDEFE and charge-photon coupling strength \uD835\uDC54\uD835\uDC50 corresponding to proposed devices designed to perform coherent cavity-mediated spin-spin coupling, we predict a maximum entangling gate fidelity of ∼60 %, indicating poor MBE performance. After increasing the cavity output coupling \uD835\uDF05out by a factor of ten, we predict an overlap between the final state of the MBE protocol and the target Bell state ∣Ψ+⟩ of ∼81 % for a postselection success probability of 33 %, as well as a significant enhancement in the entanglement-of-formation of postselected states. Therefore, we predict that an experimental realization of MBE with silicon quantum dots will be feasible with such a device.Finally, we will discuss the design changes to existing coplanar-waveguide cavity geometries needed to achieve this increase in output coupling, as well as results from the fabrication of prototypes of these designs.
Subject Added Entry-Topical Term  
Quantum physics.
Subject Added Entry-Topical Term  
Computational physics.
Subject Added Entry-Topical Term  
Condensed matter physics.
Index Term-Uncontrolled  
Electron
Index Term-Uncontrolled  
Entanglement
Index Term-Uncontrolled  
Measurement
Index Term-Uncontrolled  
Parity
Index Term-Uncontrolled  
Quantum
Index Term-Uncontrolled  
Spin
Added Entry-Corporate Name  
Princeton University Physics
Host Item Entry  
Dissertations Abstracts International. 85-12B.
Electronic Location and Access  
로그인을 한후 보실 수 있는 자료입니다.
Control Number  
joongbu:657811

MARC

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■020    ▼a9798382808031
■035    ▼a(MiAaPQ)AAI31294874
■040    ▼aMiAaPQ▼cMiAaPQ
■0820  ▼a530.1
■1001  ▼aDelva,  Remy  L.▼0(orcid)0009-0002-7673-9488
■24510▼aSimulation  of  Measurement-Based  Entanglement  in  Silicon  Spin  Qubits.
■260    ▼a[S.l.]▼bPrinceton  University.  ▼c2024
■260  1▼aAnn  Arbor▼bProQuest  Dissertations  &  Theses▼c2024
■300    ▼a110  p.
■500    ▼aSource:  Dissertations  Abstracts  International,  Volume:  85-12,  Section:  B.
■500    ▼aAdvisor:  Petta,  Jason  R.
■5021  ▼aThesis  (Ph.D.)--Princeton  University,  2024.
■520    ▼aElectron  spin  qubits  in  silicon  show  promise  for  quantum  computing  applications  due  to  their  long  spin-coherence  times,  small  qubit  sizes,  and  the  applicability  of  existing  nanofabrication  infrastructure  and  techniques  to  their  construction.  One  drawback  is  the  relative  difficulty  of  manipulating  the  electron's  spin  state.Measurement-based  entanglement  (MBE)  is  a  method  of  generating  entangled  qubit  pairs  through  the  state  projection  that  accompanies  a  parity  or  similar  measurement.  Instead  of  generating  entangled  states  via  direct  qubit-qubit  interactions,  one  can  use  a  suitable  measurement  to  project  an  initial  unentangled  two-qubit  system  into  an  entangled  subspace.  This  entanglement  mechanism  does  not  require  the  creation  of  any  direct  qubit-qubit  interactions  that  would  need  to  be  turned  off  before  using  entangled  pairs  in  a  quantum  algorithm;  only  the  cessation  of  measurement  is  required.  Adaptations  of  these  techniques  may  be  an  effective  addition  to  the  current  set  of  entanglement-generation  techniques  for  silicon  spin  qubits.  This  thesis  is  intended  to  assess  the  feasibility  of  implementing  measurement-based  entanglement  with  silicon  spin  qubits.We  will  first  review  the  design  and  operation  of  electron-spin  double-quantum-dot  (DQD)  qubits  in  Si/SiGe,  outline  theoretical  models  for  continuous  quantum  measurements  and  open  quantum  systems,  and  discuss  how  parity  measurements  can  be  used  to  establish  entanglement  between  initially  unentangled  qubits.We  will  then  discuss  how  such  a  parity  measurement  protocol  could  be  implemented  in  a  two-qubit  circuit-quantum-electrodynamics  experiment.  After  deriving  a  stochastic  master  equation  describing  the  evolution  of  two  flopping-mode  DQDs  coupled  to  a  resonant  cavity,  we  present  and  interpret  numerical  simulation  results  demonstrating  the  influence  of  qubit  and  cavity  parameters  on  the  corresponding  final  state  fidelity.Using  simulation  results  corresponding  to  current  silicon  spin-qubit  devices,  we  determine  which  device  parameters  must  be  altered  or  improved  in  order  to  make  measurement-based  entanglement  of  silicon  spin  qubits  experimentally  viable.  Specifically,  with  cavity  loss  and  qubit  decoherence  rates  \uD835\uDF05  and  \uD835\uDEFE  and  charge-photon  coupling  strength  \uD835\uDC54\uD835\uDC50  corresponding  to  proposed  devices  designed  to  perform  coherent  cavity-mediated  spin-spin  coupling,  we  predict  a  maximum  entangling  gate  fidelity  of  ∼60  %,  indicating  poor  MBE  performance.  After  increasing  the  cavity  output  coupling  \uD835\uDF05out  by  a  factor  of  ten,  we  predict  an  overlap  between  the  final  state  of  the  MBE  protocol  and  the  target  Bell  state  ∣Ψ+⟩  of  ∼81  %  for  a  postselection  success  probability  of  33  %,  as  well  as  a  significant  enhancement  in  the  entanglement-of-formation  of  postselected  states.  Therefore,  we  predict  that  an  experimental  realization  of  MBE  with  silicon  quantum  dots  will  be  feasible  with  such  a  device.Finally,  we  will  discuss  the  design  changes  to  existing  coplanar-waveguide  cavity  geometries  needed  to  achieve  this  increase  in  output  coupling,  as  well  as  results  from  the  fabrication  of  prototypes  of  these  designs.
■590    ▼aSchool  code:  0181.
■650  4▼aQuantum  physics.
■650  4▼aComputational  physics.
■650  4▼aCondensed  matter  physics.
■653    ▼aElectron
■653    ▼aEntanglement
■653    ▼aMeasurement
■653    ▼aParity
■653    ▼aQuantum
■653    ▼aSpin
■690    ▼a0599
■690    ▼a0216
■690    ▼a0611
■71020▼aPrinceton  University▼bPhysics.
■7730  ▼tDissertations  Abstracts  International▼g85-12B.
■790    ▼a0181
■791    ▼aPh.D.
■792    ▼a2024
■793    ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T17161662▼nKERIS▼z이  자료의  원문은  한국교육학술정보원에서  제공합니다.

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