자료유형  

 학위논문

Control Number  

0016932812

International Standard Book Number  

9798379845780

Dewey Decimal Classification Number  

620

Main Entry-Personal Name  

Liao, Pai-Ying.

Publication, Distribution, etc. (Imprint  

[S.l.] : Purdue University., 2022

Publication, Distribution, etc. (Imprint  

Ann Arbor : ProQuest Dissertations & Theses, 2022

Physical Description  

1 online resource(138 p.)

General Note  

Source: Dissertations Abstracts International, Volume: 85-01, Section: B.

General Note  

Advisor: Ye, Peide D.

Dissertation Note  

Thesis (Ph.D.)--Purdue University, 2022.

Restrictions on Access Note  

This item must not be sold to any third party vendors.

Summary, Etc.  

요약As the miniaturization of the transistors in integrated circuits approaches the atomic scale limit, novel materials with exceptional performance are desired. Moreover, to conduct enough current with an ultrathin and small-scale body, high drain current density is preferably required. Nevertheless, devices may suffer seriously from self-heating effect (SHE) with high drain bias and current if the generated heat cannot be dissipated efficiently. In this thesis, we introduce two material systems and several techniques to accomplish the demand without SHE. Tellurium, as a van der Waals material composed by atomic helical chains, is able to realize its one-dimensional structure. We illustrate that the cross-sectional current density of 150 MA/cm2 is achieved through boron nitride nanotube (BNNT) encapsulation without SHE due to the superior thermal conductivity of BN. With the nanotube encapsulation technique applied, one-dimensional tellurium nanowire transistors with diameter down to 2 nm are realized as well, and single tellurium atomic chain is isolated. Furthermore, atomic-layer-deposited indium oxide (In2O3) as thin-film transistors exhibit even better current carrying capacity. Through co-optimization of their electrical and thermal performance, drain current up to 4.3 mA/μm is achieved with a 1.9-nm-thick body without SHE. The alleviation of SHE is due to a) the high thermal conductivity of the substrate assisting on efficiently dissipating the generated thermal energy, b) SHE avoidance with short-pulse measurement, and c) interface engineering between the channel stack and the substrate. These two material systems may be the solid solution to the desire of high current density transistors in the post-Moore era.

Subject Added Entry-Topical Term  

Silicon.

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Crystal structure.

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Boron.

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Phosphorus.

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Integrated circuits.

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Cadmium telluride.

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Thermal energy.

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Nanowires.

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Spectrum analysis.

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Lasers.

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Power.

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Carbon.

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Molybdenum.

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Chemical vapor deposition.

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Selenium.

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Chemical bonds.

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Indium.

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Magnesium.

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Physical properties.

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Heat conductivity.

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Visualization.

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Thin films.

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Annealing.

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Analytical chemistry.

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Chemistry.

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Condensed matter physics.

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Electrical engineering.

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Energy.

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Materials science.

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Nanotechnology.

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Optics.

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Physics.

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Thermodynamics.

Added Entry-Corporate Name  

Purdue University.

Host Item Entry  

Dissertations Abstracts International. 85-01B.

Host Item Entry  

Dissertation Abstract International

Electronic Location and Access  

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Control Number  

joongbu:643779