자료유형  

 학위논문

Control Number  

0016935195

International Standard Book Number  

9798380712804

Dewey Decimal Classification Number  

621

Main Entry-Personal Name  

Stein, Shane.

Publication, Distribution, etc. (Imprint  

[S.l.] : North Carolina State University., 2023

Publication, Distribution, etc. (Imprint  

Ann Arbor : ProQuest Dissertations & Theses, 2023

Physical Description  

1 online resource(178 p.)

General Note  

Source: Dissertations Abstracts International, Volume: 85-05, Section: A.

General Note  

Advisor: Veliadis, John;Collazo, Ramon;Kish, Frederick;Pavlidis, Spyridon.

Dissertation Note  

Thesis (Ph.D.)--North Carolina State University, 2023.

Restrictions on Access Note  

This item must not be sold to any third party vendors.

Summary, Etc.  

요약The electronic properties of GaN make it a desirable candidate for microwave and power semiconductor devices. The wide bandgap provides a high breakdown electric field which enables higher output power in microwave transistors and lower on-state resistance in power devices compared to traditional semiconductors such as silicon. The high electron mobility and saturation velocity enable high frequency amplification in microwave transistors and fast switching in power devices. This work therefore explores three different thrusts for GaN junction devices to capitalize on its electrical properties.In highly scaled and integrated microwave systems such as phased arrays, crosstalk and electromagnetic interference are significant challenges. The use of optical control signals for the active microwave components in these systems, such as AlGaN/GaN high electron mobility transistors (HEMTs), offers inherent isolation between the optical and electrical signals as well as greater bandwidth and dynamic range. Therefore, the first topic explored is optical gate control of AlGaN/GaN HEMTs via UV illumination in order to unlock the abovementioned benefits in next-generation microwave photonics. The I-V, C-V, and microwave characteristics of AlGaN/GaN HEMTs are measured with and without above-bandgap UV illumination to evaluate the possibility of optically-controlled AlGaN/GaN HEMT amplifiers and oscillators.There is also significant interest in developing GaN-based heterojunction bipolar transistors (HBTs) for microwave power amplifiers. HBTs can offer higher power density, high transconductance, higher linearity, and good threshold uniformity. The high breakdown field and electron saturation velocity of GaN would allow high collector voltages and short electron transit times for achieving both high output power and high frequency. However, high contact resistance to p-type GaN makes it unsuitable for the base layer. The second thrust therefore concerns the heterogeneous integration of non-lattice-matched p-type InGaAs and ntype GaN by wafer bonding to form the base-collector junction for double heterojunction bipolar transistors (DHBTs), combining the excellent properties of GaN for the collector with the high carrier mobilities and low contact resistance of the lattice-matched InGaAs/InP system for the base/emitter. The development and characterization of the first wafer-bonded InGaAs/GaN p-n heterojunctions are presented, followed by a theoretical analysis of InP/InGaAs/GaN DHBTs including the effects of InGaAs setback and GaN pulse doping band engineering layers for the mitigation of the electron barrier at the interface resulting from the InGaAs/GaN conduction band offset.The third thrust concerns GaN p-n junctions formed by ion implantation. Power semiconductor devices capable of competitive performance require selective-area doping to form lateral p-n junctions. Effective and robust edge terminations needed to achieve high breakdown voltage also require selective-area doping. For GaN to achieve or surpass the performance of the incumbent technology, a process for selective-area doping with excellent control over the dopant concentration and spatial distribution is needed. Ion implantation is the established process able to grant this level of impurity control, but the high temperature annealing necessary for dopant activation and damage recovery after implantation typically causes the surface of GaN to thermally decompose. This work demonstrates the use of ultrahigh N2 overpressure during post-implantation annealing to stabilize the GaN surface and obtain selective-area GaN p-n junctions by Mg ion implantation, with the objective of fabricating GaN junction barrier Schottky (JBS) diodes. The development and characterization of the constituent JBS components fabricated by this process are first detailed, including the n-GaN Schottky contact, the implanted p-n junction, and the p-contact. Following this, highperformance vertical GaN JBS diodes are demonstrated, a critical step for enabling robust GaN power rectifiers and switches with low power losses that rely on selective area doping.

Subject Added Entry-Topical Term  

Diodes.

Subject Added Entry-Topical Term  

Ion implantation.

Subject Added Entry-Topical Term  

Semiconductors.

Subject Added Entry-Topical Term  

Transistors.

Subject Added Entry-Topical Term  

Heat conductivity.

Subject Added Entry-Topical Term  

Electricity distribution.

Subject Added Entry-Topical Term  

Electric fields.

Subject Added Entry-Topical Term  

Electric vehicles.

Subject Added Entry-Topical Term  

Annealing.

Subject Added Entry-Topical Term  

Electromagnetics.

Subject Added Entry-Topical Term  

Thermodynamics.

Subject Added Entry-Topical Term  

Transportation.

Added Entry-Corporate Name  

North Carolina State University.

Host Item Entry  

Dissertations Abstracts International. 85-05A.

Host Item Entry  

Dissertation Abstract International

Electronic Location and Access  

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Control Number  

joongbu:642897