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Chemical Vapor Deposition Synthesis of Graphene and Transition Metal Dichalcogenides and Their Applications- [electronic resource]
Chemical Vapor Deposition Synthesis of Graphene and Transition Metal Dichalcogenides and T...
Contents Info
Chemical Vapor Deposition Synthesis of Graphene and Transition Metal Dichalcogenides and Their Applications- [electronic resource]
Material Type  
 학위논문
 
0016934084
Date and Time of Latest Transaction  
20240214101526
ISBN  
9798380388405
DDC  
620.5
Author  
Wen, Chengyu.
Title/Author  
Chemical Vapor Deposition Synthesis of Graphene and Transition Metal Dichalcogenides and Their Applications - [electronic resource]
Publish Info  
[S.l.] : University of Pennsylvania., 2023
Publish Info  
Ann Arbor : ProQuest Dissertations & Theses, 2023
Material Info  
1 online resource(149 p.)
General Note  
Source: Dissertations Abstracts International, Volume: 85-03, Section: B.
General Note  
Advisor: Johnson, A. T. Charlie.
학위논문주기  
Thesis (Ph.D.)--University of Pennsylvania, 2023.
Restrictions on Access Note  
This item must not be sold to any third party vendors.
Abstracts/Etc  
요약2D materials is a rapidly expanding class of materials that have captivated academia and industry with their ultrathin nature and remarkable properties. Graphene, the first discovered material, shows exceptional mechanical strength and superior electrical properties, presenting exciting probabilities in many applications. Combined with its large surface area and biocompatibility, graphene is particularly promising for the development of highly sensitive and selective biosensors. However, the application of graphene is limited by its lack of a bandgap, making it unusable for advanced logic circuits. 2D materials beyond graphene are thus being explored. Transition metal dichalcogenides (TMDs) are representative candidates possessing a variety of properties including tunable bandgaps. Conventionally, both graphene and TMDs are produced by mechanical exfoliation, but this method is low-yield and not suitable for large-scale applications such as biosensing. Therefore, a reliable synthesis strategy for these materials is urgently needed. In this thesis, synthesis of graphene and TMDs by chemical vapor deposition (CVD) is explored. The CVD synthesized graphene sheet has monolayer structure which can be inch scale in size, enabling the scalable fabrication of graphene biosensors. We develop the fabrication process of graphene biosensors and explore their biosensing applications, where the sensors are used to study the interaction between a specially designed water-soluble mu opioid receptor (wsMOR) and G-protein. The biosensors are able to record the in vitro interaction between the two molecules with high sensitivity. The CVD growth of TMDs is also investigated. Rapid growth of inch-scale monolayer MoSe2 continuous film has been synthesized on insulating substrates, based on a spin-coating, NaCl assisted CVD approach. This approach is promising to be extended to the growth of other semiconducting TMDs, benefit to the batch production of large-area TMD electronics. Additionally, we studied the CVD synthesis of TMDs with controlled layer numbers at controlled locations. Various approaches are used to demonstrate the high quality of the materials and field-effect transistor measurements indicate their potential in making advanced electronic devices.
Subject Added Entry-Topical Term  
Nanotechnology.
Subject Added Entry-Topical Term  
Condensed matter physics.
Subject Added Entry-Topical Term  
Nanoscience.
Subject Added Entry-Topical Term  
Electrical engineering.
Index Term-Uncontrolled  
Biosensing
Index Term-Uncontrolled  
Chemical vapor deposition
Index Term-Uncontrolled  
Field-effect transistors
Index Term-Uncontrolled  
Graphene
Index Term-Uncontrolled  
Transition metal dichalcogenides
Added Entry-Corporate Name  
University of Pennsylvania Electrical and Systems Engineering
Host Item Entry  
Dissertations Abstracts International. 85-03B.
Host Item Entry  
Dissertation Abstract International
Electronic Location and Access  
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소장사항  
202402 2024
Control Number  
joongbu:641161
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