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Growth and Carrier Transport in Gallium Oxide Polymorphs- [electronic resource]
Growth and Carrier Transport in Gallium Oxide Polymorphs- [electronic resource]
상세정보
- 자료유형
- 학위논문
- Control Number
- 0016934346
- International Standard Book Number
- 9798380314015
- Dewey Decimal Classification Number
- 621.3
- Main Entry-Personal Name
- McCandless, Jonathan Paul.
- Publication, Distribution, etc. (Imprint
- [S.l.] : Cornell University., 2023
- Publication, Distribution, etc. (Imprint
- Ann Arbor : ProQuest Dissertations & Theses, 2023
- Physical Description
- 1 online resource(192 p.)
- General Note
- Source: Dissertations Abstracts International, Volume: 85-03, Section: B.
- General Note
- Advisor: Jena, Debdeep.
- Dissertation Note
- Thesis (Ph.D.)--Cornell University, 2023.
- Restrictions on Access Note
- This item must not be sold to any third party vendors.
- Summary, Etc.
- 요약Since 2012, when the first β-Ga2O3 transistor was demonstrated in the seminal work by Higashiwaki, et al. the field has experienced exponential growth. The promise of a ~4.7 eV bandgap, bulk large-area substrates, and n-type electrical conductivity with doping control over four orders of magnitude -- has proven too much to resist. In the intervening years, the number of papers, the amount of funding, and the number of research groups working on β-Ga2O3 has continued to rise.The less studied polymorph, α-Ga2O3, has a larger intrinsic bandgap, Eg ~ 5.3 eV, and unlike β-Ga2O3, α-Ga2O3 can be alloyed with Al over the entire compositional range, reaching bandgaps of 8.8 eV. Moreover, these high mole fraction α-(Al,Ga)2O3 films have bulk, large-area substrates: sapphire. While doping of α-Ga2O3 has been achieved, the transport properties and capabilities of α-Ga2O3 and α-(Al,Ga)2O3 may be better realized through the use of molecular beam epitaxy (MBE) growth.The work presented here is devoted to solving problems which are associated with the realization of conductive α-Ga2O3 by MBE. (i) Annealing is a critical step in device fabrication and is used to activate ion implanted donors. Because the α-Ga2O3 is meta-stable, the α-phase reverts to the β-phase upon moderate annealing. (ii) Due to the oxygen rich environment in which MBE Ga2O3 growth occurs, controllable and repeatable doping has been a challenge for all polymorphs. (iii) Due to the kinetics and thermodynamics of MBE, and due to the complex mechanism which governs the formation and growth of Ga2O3, achieving conductivity in MBE grown Ga2O3 on sapphire has remained elusive. (iv) Achieving conductivity in Ga2O3 is only one-half of the problem. The other half is to ensure that there is no conductivity where it is undesired. The surface accumulation of Si impurities has been a barrier to achieving some high-performance devices regardless of growth technique.This thesis aims to solve each of these aforementioned issues, and make progress toward achieving high-performance α-Ga2O3 devices.
- Subject Added Entry-Topical Term
- Electrical engineering.
- Subject Added Entry-Topical Term
- Applied physics.
- Subject Added Entry-Topical Term
- Materials science.
- Index Term-Uncontrolled
- Gallium oxide
- Index Term-Uncontrolled
- Molecular beam epitaxy
- Index Term-Uncontrolled
- Semiconductors
- Index Term-Uncontrolled
- Ultra wide bandgap
- Index Term-Uncontrolled
- Large-area substrates
- Added Entry-Corporate Name
- Cornell University Electrical and Computer Engineering
- Host Item Entry
- Dissertations Abstracts International. 85-03B.
- Host Item Entry
- Dissertation Abstract International
- Electronic Location and Access
- 로그인을 한후 보실 수 있는 자료입니다.
- Control Number
- joongbu:639622
MARC
008240219s2023 ulk 00 kor■001000016934346
■00520240214101558
■006m o d
■007cr#unu||||||||
■020 ▼a9798380314015
■035 ▼a(MiAaPQ)AAI30575351
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a621.3
■1001 ▼aMcCandless, Jonathan Paul.▼0(orcid)0000-0001-9084-7309
■24510▼aGrowth and Carrier Transport in Gallium Oxide Polymorphs▼h[electronic resource]
■260 ▼a[S.l.]▼bCornell University. ▼c2023
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2023
■300 ▼a1 online resource(192 p.)
■500 ▼aSource: Dissertations Abstracts International, Volume: 85-03, Section: B.
■500 ▼aAdvisor: Jena, Debdeep.
■5021 ▼aThesis (Ph.D.)--Cornell University, 2023.
■506 ▼aThis item must not be sold to any third party vendors.
■520 ▼aSince 2012, when the first β-Ga2O3 transistor was demonstrated in the seminal work by Higashiwaki, et al. the field has experienced exponential growth. The promise of a ~4.7 eV bandgap, bulk large-area substrates, and n-type electrical conductivity with doping control over four orders of magnitude -- has proven too much to resist. In the intervening years, the number of papers, the amount of funding, and the number of research groups working on β-Ga2O3 has continued to rise.The less studied polymorph, α-Ga2O3, has a larger intrinsic bandgap, Eg ~ 5.3 eV, and unlike β-Ga2O3, α-Ga2O3 can be alloyed with Al over the entire compositional range, reaching bandgaps of 8.8 eV. Moreover, these high mole fraction α-(Al,Ga)2O3 films have bulk, large-area substrates: sapphire. While doping of α-Ga2O3 has been achieved, the transport properties and capabilities of α-Ga2O3 and α-(Al,Ga)2O3 may be better realized through the use of molecular beam epitaxy (MBE) growth.The work presented here is devoted to solving problems which are associated with the realization of conductive α-Ga2O3 by MBE. (i) Annealing is a critical step in device fabrication and is used to activate ion implanted donors. Because the α-Ga2O3 is meta-stable, the α-phase reverts to the β-phase upon moderate annealing. (ii) Due to the oxygen rich environment in which MBE Ga2O3 growth occurs, controllable and repeatable doping has been a challenge for all polymorphs. (iii) Due to the kinetics and thermodynamics of MBE, and due to the complex mechanism which governs the formation and growth of Ga2O3, achieving conductivity in MBE grown Ga2O3 on sapphire has remained elusive. (iv) Achieving conductivity in Ga2O3 is only one-half of the problem. The other half is to ensure that there is no conductivity where it is undesired. The surface accumulation of Si impurities has been a barrier to achieving some high-performance devices regardless of growth technique.This thesis aims to solve each of these aforementioned issues, and make progress toward achieving high-performance α-Ga2O3 devices.
■590 ▼aSchool code: 0058.
■650 4▼aElectrical engineering.
■650 4▼aApplied physics.
■650 4▼aMaterials science.
■653 ▼aGallium oxide
■653 ▼aMolecular beam epitaxy
■653 ▼aSemiconductors
■653 ▼aUltra wide bandgap
■653 ▼aLarge-area substrates
■690 ▼a0544
■690 ▼a0794
■690 ▼a0215
■71020▼aCornell University▼bElectrical and Computer Engineering.
■7730 ▼tDissertations Abstracts International▼g85-03B.
■773 ▼tDissertation Abstract International
■790 ▼a0058
■791 ▼aPh.D.
■792 ▼a2023
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T16934346▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202402▼f2024
