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3D Vertical Resistive Switching Memory Towards Ultrahigh-Density Non-Volatile Memory.
3D Vertical Resistive Switching Memory Towards Ultrahigh-Density Non-Volatile Memory.
상세정보
- 자료유형
- 학위논문
- Control Number
- 0016620645
- International Standard Book Number
- 9798357506610
- Dewey Decimal Classification Number
- 540
- Main Entry-Personal Name
- Qin, Shengjun.
- Publication, Distribution, etc. (Imprint
- [S.l.] : Stanford University., 2022
- Publication, Distribution, etc. (Imprint
- Ann Arbor : ProQuest Dissertations & Theses, 2022
- Physical Description
- 110 p.
- General Note
- Source: Dissertations Abstracts International, Volume: 84-05, Section: B.
- General Note
- Advisor: Saraswat, Krishna;Wong, S. Simon.
- Dissertation Note
- Thesis (Ph.D.)--Stanford University, 2022.
- Restrictions on Access Note
- This item must not be sold to any third party vendors.
- Subject Added Entry-Topical Term
- Tin.
- Subject Added Entry-Topical Term
- Random access memory.
- Subject Added Entry-Topical Term
- Electrodes.
- Subject Added Entry-Topical Term
- Semiconductors.
- Subject Added Entry-Topical Term
- Power.
- Subject Added Entry-Topical Term
- Logic.
- Subject Added Entry-Topical Term
- Electric fields.
- Subject Added Entry-Topical Term
- Optimization.
- Subject Added Entry-Topical Term
- Data processing.
- Subject Added Entry-Topical Term
- Families & family life.
- Subject Added Entry-Topical Term
- Design.
- Subject Added Entry-Topical Term
- Connectivity.
- Subject Added Entry-Topical Term
- CMOS.
- Subject Added Entry-Topical Term
- Arrays.
- Subject Added Entry-Topical Term
- Transistors.
- Subject Added Entry-Topical Term
- Energy consumption.
- Subject Added Entry-Topical Term
- Computer science.
- Subject Added Entry-Topical Term
- Electrical engineering.
- Subject Added Entry-Topical Term
- Electromagnetics.
- Subject Added Entry-Topical Term
- Energy.
- Subject Added Entry-Topical Term
- Individual & family studies.
- Subject Added Entry-Topical Term
- Physics.
- Added Entry-Corporate Name
- Stanford University.
- Host Item Entry
- Dissertations Abstracts International. 84-05B.
- Host Item Entry
- Dissertation Abstract International
- Electronic Location and Access
- 로그인을 한후 보실 수 있는 자료입니다.
- Control Number
- joongbu:626869
MARC
008230220s2022 ulk 00 kor■001000016620645
■00520230206110442
■020 ▼a9798357506610
■035 ▼a(MiAaPQ)AAI29755757
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a540
■1001 ▼aQin, Shengjun.
■24510▼a3D Vertical Resistive Switching Memory Towards Ultrahigh-Density Non-Volatile Memory.
■260 ▼a[S.l.]▼bStanford University. ▼c2022
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2022
■300 ▼a110 p.
■500 ▼aSource: Dissertations Abstracts International, Volume: 84-05, Section: B.
■500 ▼aAdvisor: Saraswat, Krishna;Wong, S. Simon.
■5021 ▼aThesis (Ph.D.)--Stanford University, 2022.
■506 ▼aThis item must not be sold to any third party vendors.
■590 ▼aSchool code: 0212.
■650 4▼aTin.
■650 4▼aRandom access memory.
■650 4▼aElectrodes.
■650 4▼aSemiconductors.
■650 4▼aPower.
■650 4▼aLogic.
■650 4▼aElectric fields.
■650 4▼aOptimization.
■650 4▼aData processing.
■650 4▼aFamilies & family life.
■650 4▼aDesign.
■650 4▼aConnectivity.
■650 4▼aCMOS.
■650 4▼aArrays.
■650 4▼aTransistors.
■650 4▼aEnergy consumption.
■650 4▼aComputer science.
■650 4▼aElectrical engineering.
■650 4▼aElectromagnetics.
■650 4▼aEnergy.
■650 4▼aIndividual & family studies.
■650 4▼aPhysics.
■690 ▼a0395
■690 ▼a0389
■690 ▼a0984
■690 ▼a0544
■690 ▼a0607
■690 ▼a0791
■690 ▼a0628
■690 ▼a0605
■71020▼aStanford University.
■7730 ▼tDissertations Abstracts International▼g84-05B.
■773 ▼tDissertation Abstract International
■790 ▼a0212
■791 ▼aPh.D.
■792 ▼a2022
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T16620645▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202302▼f2023
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