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Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices
Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices
- 자료유형
- 학위논문
- Control Number
- 0015758990
- International Standard Book Number
- 9798698594918
- Dewey Decimal Classification Number
- 621.3
- Main Entry-Personal Name
- Walters, Glen Harris.
- Publication, Distribution, etc. (Imprint
- [Sl] : University of Florida, 2020
- Publication, Distribution, etc. (Imprint
- Ann Arbor : ProQuest Dissertations & Theses, 2020
- Physical Description
- 171 p
- General Note
- Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
- General Note
- Advisor: Nishida, Toshikazu.
- Dissertation Note
- Thesis (Ph.D.)--University of Florida, 2020.
- Restrictions on Access Note
- This item must not be sold to any third party vendors.
- Subject Added Entry-Topical Term
- Electrical engineering
- Subject Added Entry-Topical Term
- Ferroelectrics
- Subject Added Entry-Topical Term
- CMOS
- Subject Added Entry-Topical Term
- Semiconductors
- Subject Added Entry-Topical Term
- Thin films
- Index Term-Uncontrolled
- ALD
- Index Term-Uncontrolled
- Ferroelectric
- Index Term-Uncontrolled
- Hafnium oxide
- Index Term-Uncontrolled
- Thin film
- Added Entry-Corporate Name
- University of Florida Electrical and Computer Engineering
- Host Item Entry
- Dissertations Abstracts International. 82-06B.
- Host Item Entry
- Dissertation Abstract International
- Electronic Location and Access
- 로그인을 한후 보실 수 있는 자료입니다.
- Control Number
- joongbu:593097
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