자료유형  

 학위논문

Control Number  

0015490881

International Standard Book Number  

9781085558266

Dewey Decimal Classification Number  

620.5

Main Entry-Personal Name  

Liu, Xueqing.

Publication, Distribution, etc. (Imprint  

[Sl] : Rensselaer Polytechnic Institute, 2019

Publication, Distribution, etc. (Imprint  

Ann Arbor : ProQuest Dissertations & Theses, 2019

Physical Description  

101 p

General Note  

Source: Dissertations Abstracts International, Volume: 81-02, Section: B.

General Note  

Advisor: Shur, Michael S.

Dissertation Note  

Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2019.

Restrictions on Access Note  

This item must not be sold to any third party vendors.

Summary, Etc.  

요약TeraFETs, plasmonic field effect transistors (FETs) operating in the terahertz (THz) frequency range, have found applications as sub millimeter-wave and THz components for THz detection, mixing, imaging, etc. Responsivity is a critical parameter for TeraFETs and deserves the investigation and improvement for the advancement of high performance TeraFET detectors. Compact and numerical device models have an essential role in enabling applications for semiconductor-based terahertz technologies. Thus, it is of extreme value to the scientific community to develop effective and efficient models to propel the research and applications for the TeraFETs.In this thesis, we have developed numerical models for TeraFET detectors in Synopsys Sentaurus TCAD. The model is valid over a wide dynamic input range (from around 5 mV to 6 V). By examining the physical mechanisms in such TCAD models, experimentally-observed saturation effect at high intensity levels (above 1 V) can be understood. The effect is associated with different mechanisms depending on the material system including leakage current, velocity saturation, and avalanche effect. We also developed a compact SPICE model for heterostructure FET (HFET) THz detectors valid over a wide dynamic range (from around 1 mV to 7 V). The model incorporates the saturation effect at high intensity levels (above 1 V) by including leakage components. Furthermore, resonant detection for submicron high mobility devices are observed by including Drude inductance. The developed SPICE-compatible models for TeraFET detectors include channel segmentation and Drude inductance, and are valid from 0.1 THz to 10 THz. The developed model also show the significance of electron inertia at high THz frequencies for long channel devices. All developed models show good agreement with the analytical theory and experimental data and could be effectively used for the simulation, design, and characterization of sub-millimeter wave and Terahertz wave devices and integrated circuits.

Subject Added Entry-Topical Term  

Electrical engineering

Subject Added Entry-Topical Term  

Applied physics

Subject Added Entry-Topical Term  

Nanotechnology

Added Entry-Corporate Name  

Rensselaer Polytechnic Institute Electrical Engineering

Host Item Entry  

Dissertations Abstracts International. 81-02B.

Host Item Entry  

Dissertation Abstract International

Electronic Location and Access  

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Control Number  

joongbu:566851