서브메뉴
검색
Numerical and Compact Field Effect Transistor Models Validated for Terahertz Detection
Numerical and Compact Field Effect Transistor Models Validated for Terahertz Detection
상세정보
- 자료유형
- 학위논문
- Control Number
- 0015490881
- International Standard Book Number
- 9781085558266
- Dewey Decimal Classification Number
- 620.5
- Main Entry-Personal Name
- Liu, Xueqing.
- Publication, Distribution, etc. (Imprint
- [Sl] : Rensselaer Polytechnic Institute, 2019
- Publication, Distribution, etc. (Imprint
- Ann Arbor : ProQuest Dissertations & Theses, 2019
- Physical Description
- 101 p
- General Note
- Source: Dissertations Abstracts International, Volume: 81-02, Section: B.
- General Note
- Advisor: Shur, Michael S.
- Dissertation Note
- Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2019.
- Restrictions on Access Note
- This item must not be sold to any third party vendors.
- Summary, Etc.
- 요약TeraFETs, plasmonic field effect transistors (FETs) operating in the terahertz (THz) frequency range, have found applications as sub millimeter-wave and THz components for THz detection, mixing, imaging, etc. Responsivity is a critical parameter for TeraFETs and deserves the investigation and improvement for the advancement of high performance TeraFET detectors. Compact and numerical device models have an essential role in enabling applications for semiconductor-based terahertz technologies. Thus, it is of extreme value to the scientific community to develop effective and efficient models to propel the research and applications for the TeraFETs.In this thesis, we have developed numerical models for TeraFET detectors in Synopsys Sentaurus TCAD. The model is valid over a wide dynamic input range (from around 5 mV to 6 V). By examining the physical mechanisms in such TCAD models, experimentally-observed saturation effect at high intensity levels (above 1 V) can be understood. The effect is associated with different mechanisms depending on the material system including leakage current, velocity saturation, and avalanche effect. We also developed a compact SPICE model for heterostructure FET (HFET) THz detectors valid over a wide dynamic range (from around 1 mV to 7 V). The model incorporates the saturation effect at high intensity levels (above 1 V) by including leakage components. Furthermore, resonant detection for submicron high mobility devices are observed by including Drude inductance. The developed SPICE-compatible models for TeraFET detectors include channel segmentation and Drude inductance, and are valid from 0.1 THz to 10 THz. The developed model also show the significance of electron inertia at high THz frequencies for long channel devices. All developed models show good agreement with the analytical theory and experimental data and could be effectively used for the simulation, design, and characterization of sub-millimeter wave and Terahertz wave devices and integrated circuits.
- Subject Added Entry-Topical Term
- Electrical engineering
- Subject Added Entry-Topical Term
- Applied physics
- Subject Added Entry-Topical Term
- Nanotechnology
- Added Entry-Corporate Name
- Rensselaer Polytechnic Institute Electrical Engineering
- Host Item Entry
- Dissertations Abstracts International. 81-02B.
- Host Item Entry
- Dissertation Abstract International
- Electronic Location and Access
- 로그인을 한후 보실 수 있는 자료입니다.
- Control Number
- joongbu:566851
MARC
008200131s2019 c eng d■001000015490881
■00520200217181032
■020 ▼a9781085558266
■035 ▼a(MiAaPQ)AAI13859253
■040 ▼aMiAaPQ▼cMiAaPQ
■0820 ▼a620.5
■1001 ▼aLiu, Xueqing.
■24510▼aNumerical and Compact Field Effect Transistor Models Validated for Terahertz Detection
■260 ▼a[Sl]▼bRensselaer Polytechnic Institute▼c2019
■260 1▼aAnn Arbor▼bProQuest Dissertations & Theses▼c2019
■300 ▼a101 p
■500 ▼aSource: Dissertations Abstracts International, Volume: 81-02, Section: B.
■500 ▼aAdvisor: Shur, Michael S.
■5021 ▼aThesis (Ph.D.)--Rensselaer Polytechnic Institute, 2019.
■506 ▼aThis item must not be sold to any third party vendors.
■520 ▼aTeraFETs, plasmonic field effect transistors (FETs) operating in the terahertz (THz) frequency range, have found applications as sub millimeter-wave and THz components for THz detection, mixing, imaging, etc. Responsivity is a critical parameter for TeraFETs and deserves the investigation and improvement for the advancement of high performance TeraFET detectors. Compact and numerical device models have an essential role in enabling applications for semiconductor-based terahertz technologies. Thus, it is of extreme value to the scientific community to develop effective and efficient models to propel the research and applications for the TeraFETs.In this thesis, we have developed numerical models for TeraFET detectors in Synopsys Sentaurus TCAD. The model is valid over a wide dynamic input range (from around 5 mV to 6 V). By examining the physical mechanisms in such TCAD models, experimentally-observed saturation effect at high intensity levels (above 1 V) can be understood. The effect is associated with different mechanisms depending on the material system including leakage current, velocity saturation, and avalanche effect. We also developed a compact SPICE model for heterostructure FET (HFET) THz detectors valid over a wide dynamic range (from around 1 mV to 7 V). The model incorporates the saturation effect at high intensity levels (above 1 V) by including leakage components. Furthermore, resonant detection for submicron high mobility devices are observed by including Drude inductance. The developed SPICE-compatible models for TeraFET detectors include channel segmentation and Drude inductance, and are valid from 0.1 THz to 10 THz. The developed model also show the significance of electron inertia at high THz frequencies for long channel devices. All developed models show good agreement with the analytical theory and experimental data and could be effectively used for the simulation, design, and characterization of sub-millimeter wave and Terahertz wave devices and integrated circuits.
■590 ▼aSchool code: 0185.
■650 4▼aElectrical engineering
■650 4▼aApplied physics
■650 4▼aNanotechnology
■690 ▼a0544
■690 ▼a0652
■690 ▼a0215
■71020▼aRensselaer Polytechnic Institute▼bElectrical Engineering.
■7730 ▼tDissertations Abstracts International▼g81-02B.
■773 ▼tDissertation Abstract International
■790 ▼a0185
■791 ▼aPh.D.
■792 ▼a2019
■793 ▼aEnglish
■85640▼uhttp://www.riss.kr/pdu/ddodLink.do?id=T15490881▼nKERIS▼z이 자료의 원문은 한국교육학술정보원에서 제공합니다.
■980 ▼a202002▼f2020
